? semiconductor components industries, llc, 2004 september, 2004 ? rev. 3 1 publication order number: MMBT2222AWt1/d MMBT2222AWt1 preferred device general purpose transistor npn silicon these transistors are designed for general purpose amplifier applications. they are housed in the sot?323/sc?70 package which is designed for low power surface mount applications. maximum ratings rating symbol value unit collector ?emitter voltage v ceo 40 vdc collector ?base voltage v cbo 75 vdc emitter ?base voltage v ebo 6.0 vdc collector current ? continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board t a = 25 c p d 150 mw thermal resistance junction?to?ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. device package shipping 2 ordering information MMBT2222AWt1 sc?70 sc?70 case 419 style 3 3000/tape & reel 2 3 1 preferred devices are recommended choices for future use and best overall value. marking diagram p1 m p1 = specific device code m = date code collector 3 1 base 2 emitter http://onsemi.com 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
MMBT2222AWt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 1) (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector ?base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 75 ? vdc emitter ?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 ? vdc base cutoff current (v ce = 60 vdc, v eb = 3.0 vdc) i bl ? 20 nadc collector cutoff current (v ce = 60 vdc, v eb = 3.0 vdc) i cex ? 10 nadc on characteristics (note 1) dc current gain (note 1) (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 150 madc, v ce = 10 vdc) (i c = 500 madc, v ce = 10 vdc) h fe 35 50 75 100 40 ? ? ? 300 ? ? collector ?emitter saturation voltage (note 1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? 0.3 1.0 vdc base ?emitter saturation voltage (note 1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.6 ? 1.2 2.0 vdc small?signal characteristics current ?gain ? bandwidth product (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) f t 300 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ? 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 30 pf input impedance (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h ie 0.25 1.25 k ohms voltage feedback ratio (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h re ? 4.0 x 10 ?4 small ?signal current gain (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h fe 75 375 ? output admittance (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) h oe 25 200 mhos noise figure (v ce = 10 vdc, i c = 100 adc, r s = 1.0 k , f = 1.0 khz) nf ? 4.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = ? 0.5 vdc, t d ? 10 ns rise time (v cc 3 . 0 vdc , v be 0 . 5 vdc , i c = 150 madc, i b1 = 15 madc) t r ? 25 ns storage time (v cc = 30 vdc, i c = 150 madc, t s ? 225 ns fall time (v cc 30 vdc , i c 150 madc , i b1 = i b2 = 15 madc) t f ? 60 ns 1. pulse test: pulse width 300 s, duty cycle 2.0%.
MMBT2222AWt1 http://onsemi.com 3 figure 1. turn?on time figure 2. turn?off time switching time equivalent test circuits scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope. +16 v -2 v < 2 ns 0 1.0 to 100 m s, duty cycle 2.0% 1 k w +30 v 200 c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 m s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf -4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 3. dc current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 4. collector saturation region t j = 125 c t j = 25 c 25 c -55 c i c = 1.0 ma 10 ma 150 ma 500 ma v ce = 1.0 v v ce = 10 v
MMBT2222AWt1 http://onsemi.com 4 figure 5. turn ?on time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. turn ?off time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s - 1/8 t f t f figure 7. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 w 500 m a, r s = 200 w 100 m a, r s = 2.0 k w 50 m a, r s = 4.0 k w f = 1.0 khz i c = 50 m a 100 m a 500 m a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 9. capacitances reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. current?gain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , current-gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c
MMBT2222AWt1 http://onsemi.com 5 figure 11. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 v, voltage (volts) 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v figure 12. temperature coefficients i c , collector current (ma) -0.5 0 +0.5 coefficient (mv/ c) -1.0 -1.5 -2.5 r vc for v ce(sat) r vb for v be 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k 1.0 v -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500
MMBT2222AWt1 http://onsemi.com 6 package dimensions c n a l d g s b h j k 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.032 0.040 0.80 1.00 d 0.012 0.016 0.30 0.40 g 0.047 0.055 1.20 1.40 h 0.000 0.004 0.00 0.10 j 0.004 0.010 0.10 0.25 k 0.017 ref 0.425 ref l 0.026 bsc 0.650 bsc n 0.028 ref 0.700 ref s 0.079 0.095 2.00 2.40 0.05 (0.002) style 3: pin 1. base 2. emitter 3. collector sc?70/sot?323 case 419?04 issue l 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 soldering footprint on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MMBT2222AWt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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